InGaAsP四元系量子阱材料的热稳定性

Thermal Stability of InGaAsP Quaternary Quantum Wells Materials

对与ＩｎＰ晶格匹配的ＩｎＧａＡｓＰ四元系量子阱材料进行了一系列热稳定性能的研究，通过光荧光谱（ＰＬ）的测量发现：ＩｎＧａＡｓＰ四元系量子阱材料在６５０ ℃以上的常规退火条件下有量子阱混合现象产生，而单量子阱结构较多量子阱或超晶格结构更容易产生量子阱混合．对单量子阱片进行快速退火处理后，荧光峰位置、峰宽无明显变化，表明量子阱混合的产生除了依赖于退火温度的高低，也与退火时间的长短密切相关．

Thermal stability InGaAsP quaternary quantum wells materials is studied using photoluminescence (PL) spectra measurement. It is found that quantum wells intermixing (QWI) of InGaAsP quaternary quantum wells material is occurred when the temperature exceeds 650℃ under normal annealing. Single quantum well (SQW) structure is shown intermixed easier than Superlattice (SL) structure does. Little change on position and width of the peak in PL spectrum after rapid thermal processing (RTP) on SQW structure shows that the occurrence of QWI is dependent closely on either temperature or annealing time.