摘要
A kind of negative photoresist, composed of photosensitive polyimides and N methyl 2 pyrrolidone was formulated. The curing mechanism and the relationship of the properties and structure of PSPIs were studied. The results of TGA show that the PSPIs have excellent heat resistance. Based on our research, the pattern with line width as low as 2.5 μm was gained with the conventional UV photolithography under the optimum parameters.
A kind of negative photoresist, composed of photosensitive polyimides and N methyl 2 pyrrolidone was formulated. The curing mechanism and the relationship of the properties and structure of PSPIs were studied. The results of TGA show that the PSPIs have excellent heat resistance. Based on our research, the pattern with line width as low as 2.5 μm was gained with the conventional UV photolithography under the optimum parameters.
出处
《感光科学与光化学》
CSCD
1999年第4期334-337,共4页
Photographic Science and Photochemistry
基金
国家自然科学基金
河北省自然科学基金
关键词
聚酰亚胺
光固化
热失重
光刻工艺
抗蚀剂
photosensitive polyimide, curing mechanism, thermogravimtric analysis, photolithographic process
