摘要
本文报道了Ca3(VO4)2 晶体生长时原料组分的选择,指出相图上CaO质量分数的范围在36 %~40% 是合理的生长区间。讨论了合成原料的合理方式,采用CaCO3 与V2O5 直接合成的方法能够避免采用CaO或Ca(OH)2 与V2O5 进行合成时原料与空气中的H2O 及CO2 反应,影响称量准确性的问题。详细地给出了光加热浮动熔区法和提拉法生长Ca3(VO4)2 晶体时原料的制备工艺。采用光加热浮动熔区法时用9MPa 压力制棒,采用两步法烧结:850 ℃×8h →1200 ℃×8h。在提拉法生长晶体时采用球磨机湿混料、80 ℃烘干、20MPa 压力下压料饼,也采用两步法烧结:850℃×8h →1200 ℃×8h。
s The composition of Ca 3(VO 4) 2 charge is chosen by analysis the phase diagram of V 2O 5 CaO system,It turns out that the Ca 3(VO 4) 2 crystal can be grown from the charges which composition is CaO within 36wt%~40 wt%.The most reasonable composing method is proposed by discussing the possible ones.The reaction between CaCO 3 and V 2O 5 is better than the reaction between CaO and V 2O 5 or Ca(OH) 2 and V 2O 5 for its avoiding the reaction of H 2O or CO 2 with CaO and Ca(OH) 2 that might affect the weighing accuracy.Details about the mixture,shaping and high temperature treatment of the charges are given for both light heating floating zone method and Czochralski method to growth crystal.With the light heating floating zone method,the charge rod was made under the pressure of 9MPa and heated with two steps 850℃×8h→1200℃×8h.With the Czochralski method,the charge was mixed by ball grinding mill then evaporated the alcohol at 80℃.The charge disc was made under the pressure of 20 MPa and heated with two steps 850℃×8hr→1200℃×8hr.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
1999年第4期350-353,共4页
Journal of Synthetic Crystals
关键词
钒酸钙晶体
原料制备
激光晶体
晶体生长
Ca_3(VO_4)_2 crystal,raw material preparing,floating zone method,Czochralski method,self frequency doubling laser crystal