摘要
真空 microelectronic 来源的数组用含铜的氧化物(CuO ) 在玻璃底层上被制作 nanowire emitters。电子来源的数组拥有 microdiode 结构，它能有效地导致域排放并且在三极管类型设备操作控制射出的电子的交货到阳极。为没有使用催化剂并且在象 400 潩?敦摥慢正瀠牡浡瑥牥甠楳杮琠敨猠瑡汥楬整猭湥敳?潎浲污穩摥?晩敦敲据?敖敧慴楴湯?摮硥?一样低的温度，精确在一个数组在 microcavities 的中心种 CuO nanowires 的一种技术???湡?扯敳癲摥琠浥数慲畴敲?潦?桴?数楲摯ㄠ?有????污?敳獡湯?瘠来瑥瑡潩?硥牥獴愠洠'?瑳潲杮牥映牯楣杮漠??慭?桴湡漠??業?愠摮琠畨?慨???獢慴瑮慩?晥敦瑣漠?桴?楤牵慮?整灭牥瑡牵?慲杮??剔?癯牥?楨慮?楓湧晩捩湡?潰楳楴敶映敥'N捡獫漠??慭?湡?桴?呄?耶喌嚊?牡慥?景?楨慮眠瑩?桴?
Arrays of vacuum microelectronic sources are fabricated on a glass substrate using cupric oxide （CuO） nanowire emitters. The arrays of electron sources possess a microdiode structure, which can effectively induce field emission and control the delivery of emitted electrons to the anode in a triode-type device operation. A technique for precisely growing CuO nanowires at the centre of microcavities in an array without using a catalyst and at temperatures as low as 400℃ is presented. Such a simplified fabrication procedure results in improved field emission performance from the array compared with previous vacuum microelectronic devices Typical prototype devices have turn-on gate voltages as low as 169 V to give emission current densities of 10μtA/cm2 at the anode. The ratio of anode current to cathode current reaches -0.85, and the maximum change in emission current density per volt is 1μtA/cm2. Electron emission from the arrays is stable and reproducible under either pulsed or direct current fields. These characteristics indicate that microgate-controUed CuO nanowire emitters may find application in practical devices.
基金
supported by the National Natural Science Foundation of China (U0634002 and 50725206)
the National Basic Research Program of China (2003CB314701, 2007CB935501, 2010CB327703 and 2008- AA03A314),the Science and Technology Department of Guangdong Province, the Department of Information Industry of Guangdong Province, and the Science and Technology Department of Guangzhou City
