同步辐射掠入射X射线衍射法研究TiAlN薄膜离子注入层的微观结构

Study on Implanted TiAlN Films by Synchrotron Radiation Grazing Incident X-Ray Diffraction

利用磁过滤阴极电弧镀在硬质合金上沉积厚度约2～3μm的Ti Al N薄膜,并用MEVVA源离子对Ti Al N薄膜注入金属离子V+和Nb+。应用北京同步辐射装置(BSRF)的同步辐射光源,采用掠入射X射线衍射(GIXRD)的方法对Ti Al N薄膜表面离子注入层的微观结构进行分析研究。结果表明:未经过离子注入的Ti Al N薄膜主要组成相是没有择优取向的Ti3Al N伴有少量Al N,而较小剂量(1×1017ions/cm2)的离子注入都可以使Ti3Al N产生(111)上的择优取向和细化晶粒,且Al N消失;当离子注入的剂量达到5×1017ions/cm2时,注入V+的Ti3Al N择优取向变为(210),并产生Ti N相;注入Nb+的各个衍射峰完全消失,说明Ti Al N薄膜表面离子注入层被非晶化,结合透射电镜的研究结果,观察到非晶层的厚度约为80～100 nm。

The synchrotron radiation grazing incident X-ray diffraction（GIXRD） method was applied to analyze the microstructure of the TiAlN films,which was implanted with V＋ and Nb＋ by MEVVA at different dosages after deposited on the cemented carbide（WC-Co） by Magnetic Filter Arc Ion Plantation into 2～3 μm.The result shows that： the principal phase in the TiAlN film without implantation is the un-preferred orientation Ti3AlN with a small amount of AlN.Nevertheless,when implanted with minor dosage（1×1017 ions/cm2）,the grain would be refined and preferred orientation in crystal face（111） arises,while AlN disappears,when the dosage reaches 5×1017 ions/cm2,the preferred orientation turns into（210） implanted with V＋,and a considerable amount of TiN emerges with Nb＋,all the peaks completely vanish,combining with the TEM result,it is observed that the thickness of amorphous is about 80～100 nm.