摘要
利用金属有机物化学气相淀积(MOCVD)技术在蓝宝石衬底上生长了InGaN:Mg薄膜,对不同源流量In-GaN:Mg材料特性进行了研究。光学和电学特性观测表明,当外延生长温度在760℃,三甲基铟(TMIn)摩尔流量不变时,随CP2Mg和Ⅲ族源摩尔比([CP2Mg]/[Ⅲ])增加,当In摩尔成分增加,空穴浓度也线性增加;当[CP2Mg]/[Ⅲ]比为1.12×10-3时获得4.78×1019cm-3高空穴浓度。通过原子力显微镜(AFM)观察到粗化的表面,采用InGaN:Mg薄膜作为接触层制备的发光二极管(LED)比常规LED的电荧光强度提高28%。
InGaN:Mg films were grown by metal-organic chemical vapor deposition(MOCVD),and the properties of InGaN:Mg the materials with different source fluxes were studied.The optical and electrical properties show that when epitaxial growth temperature is at 760 ℃,the TMIn molar flux is certain,the In molecomposition increases with the increase of CP2Mg and Ⅲ family source molar ratio(/[Ⅲ]),and the hole concentration also increases linearly.When /[Ⅲ] is 1.12×10-3,the high hole concentration of 4.78×1019 cm-3 is obtained.Moreover,the electro-luminescence intensity of the light-emitting diodes(LEDs) with InGaN:Mg as contact layer is enhanced by 28% compared with conventional LEDs.
出处
《光电子.激光》
EI
CAS
CSCD
北大核心
2011年第5期666-668,672,共4页
Journal of Optoelectronics·Laser
基金
国家高技术研究发展"863"计划资助项目(2008AA03Z402)
北京市自然科学基金资助项目(4102003
4112006
4092007)
北京市教育委员会科技发展计划资助项目(KM200810005002)
北京工业大学博士科研启动基金资助项目(X0002013200901
X0002013200902)