应用于LCD的平栅型碳纳米管场致发射显示器背光源的研制

Development of planar-gate-type CNT-FED back light unit for LCD

采用磁控溅射、光刻和湿法刻蚀技术制备平栅型场发射阴极阵列,利用电泳将碳纳米管(CNT)发射源沉积在阴极表面,将阴极板和阳极板封接后制成51 cm单色平栅型CNT场致发射显示器(CNT-FED),作为背光源模板应用于49 cm液晶显示器(LCD)器件中。场发射测试表明,器件在阳极电压3 500 V、栅极电压290 V时,阳极电密度高达81.3μA/cm2,最高亮度可达7000 cd/m2,均匀性为96%;稳定发射7 h后,发射电流无明显衰减。以背光源形式应用于49 cm×25.4 mm LCD器件,亮度可达205 cd/m2。

Field emission cathode arrays of planar-gate-type triodes are fabricated on the glass substrate by magnetron sputtering,conventional photolithography and chemical wet etching.The carbon nanotube（CNT） emitters were deposited on the cathode by electrophoretic deposition.The cathode plate and anode plate were packaged into a 51-cm monochrome field emission display（FED） with planar-gate-type triode,which is applied for 49-cm liquid crystal display（LCD） as backlight unit and its field emission characteristics are investigated.The field emission performance shows that the maximum current density is approximately 81.3 μA/cm2, its highest lightness could reach to 7 000 cd/m2 and luminescent uniformity was more than 96% when the gate and anode voltages are 290 V and 3 500 V,respectively.Moreover,the emission current fluctuation is less than 6% for 7 h.Its highest lightness for back light unit in 20-in.LCD could come to 205 cd/m2.