化学气相沉积法制备Sn_2S_3一维纳米结构阵列

Preparation of Sn_2S_3 One-Dimensional Nanostructure Arrays by Chemical Vapor Deposition

运用化学气相沉积法(CVD),直接以Sn和S为原料分区加热蒸发,通过控制温度分布、气压、载气流量和金属铅纳米颗粒分布等宏观实验条件,成功制备大面积Sn2S3一维纳米结构阵列.扫描电子显微镜(SEM)图片显示:Sn2S3一维纳米结构的横向尺度在100nm左右,长约几个微米.X射线衍射(XRD)谱显示:所制备样品的晶体结构属于正交晶系,沿[002]方向生长.紫外-可见漫反射谱表明Sn2S3一维纳米结构是带隙为2.0eV的直接带隙半导体.讨论了温度分布和金属铅纳米颗粒对Sn2S3一维纳米结构生长的影响,并指出其生长可能遵循气-固(V-S)生长机理.

We prepared large-area, vertically aligned Sn2S3 one-dimensional nanostructure arrays using tin and sulfur powder as reactants on a lead-plated silicon substrate by chemical vapor deposition （CVD）. Scanning electron microscopy （SEM） showed that these Sn2S3 nanowires had diameters around 100 nm and lengths of several microns. X-ray diffraction （XRD） results indicated that the obtained Sn2S3 nanowires were composed of an orthorhombic phase with very good crystallinity, and grow in the [002] direction. Ultraviolet-visible （UV-Vis） diffuse reflectance spectroscopy revealed that they are direct-bandgap semiconductors with a bandgap of 2.0 eV. The growth of Sn2S3 nanowires is governed by the vapor-solid （V-S） growth mechanism, and the Pb atoms present in the lattice as substitutional atoms instead of on the tips of nanowires as catalyst particles.