IGBT过电压产生机理分析及RC缓冲电路的设计

Analysis on the Reasons of Over Voltage for IGBT and the Design of RC Snubber Circuit

由于IGBT经常工作于高频状态,因此对其关断过电压的抑制就显得尤为重要。对IGBT关断过电压的产生机理进行了分析,对常用的3种缓冲电路进行简单介绍,并且重点对RC缓冲电路的工作原理及参数确定进行了理论分析。搭建了用于测试IGBT动态特性的电路模型,并通过Multisim对RC缓冲电路进行了仿真与分析,验证了RC缓冲电路的吸收特性。

Duing to the IGBT often work in the high frequency condition, so it is important to restrain its overvoltage in the process of turning of the IGBT. This paper analyzed the reasons of overvoltage for IGBT, introduced three kinds of snubber circuit which is commonly used on the current and analyzed the working principle and parameters of the RC snubber circuit. This paper built a specifically circuit model which was used to testing the dynamic characteristics of IGBT. RC snubber circuit was simulated and analyzed by the Multisim and the absorption characteristic of RC snubber circuit was certified.