摘要
从获取最小噪声系数角度来进行电路设计,采用Avago公司的0.2um GaAs pHEMT工艺芯片(T=18GHz),设计了工作于X波段(9-11GHz)的两级宽带低噪声放大器。测试结果为:在9-11GHz,噪声系数小于1.15dB,最小噪声系数在9.8GHz为1.015dB,功率增益在所需频段9-11GHz大于24dB,输入和输出回波损耗均小于-10dB。
A broadband,X-band two stage low noise amplifier is designed,with the 0.2um GaAs pHEMT transistor of Avago company.It is designed with the minimized noise figure.The result is successful to achieve the design objective.It provides more than 24dB power gain and less than 1.15 dB noise figure at the frequences from 9-11GHz.The least NF is 1.015dB at 9.8GHz.The output and input return loss is less than-10dB.
出处
《中国传媒大学学报（自然科学版）》
2011年第1期71-75,共5页
Journal of Communication University of China：Science and Technology
关键词
低噪声放大器
噪声系数
温度补偿
low noise amplifier
noise figure
temperature compensation
