Comparison of Different Solutions for Blocking Diode Applications in a Photovoltaic Panel under Varying Ambient Conditions
Comparison of Different Solutions for Blocking Diode Applications in a Photovoltaic Panel under Varying Ambient Conditions
摘要
We characterized a crystalline silicon based mini-module under varying ambient conditions, developed a PSPICE model for this panel, including temperature and irradiation dependence and applied this model to the simulation of the impact of a blocking diode under different shadowing conditions. Different blocking diodes were examined, like germanium and silicon homojunction diodes and silicon Schottky diodes and compared to "intelligent" diodes, consisting of operational amplifiers with MOSFET switches. The simulations indicate a strongly reduced power loss in a panel integrating the new "intelligent" blocking diodes even when compared to silicon Schottky diodes, as the best performing traditional blocking diodes.
参考文献8
-
1S.J. Durand, Attaining a 30-year photovoltaic system lifetime: The BOS issues, Progress in Photovoltaics 2 (2007) 107-113.
-
2J.C. Wiles, D.L. King, Blocking diodes and fuses in low-voltage PV systems, in: Proc. of the 26th IEEE Photovoltaic Specialists Conf., Anaheim, 1997, pp. 1105-1108.
-
3A. Abete, E. Barbisio, F. Cane, P. Demartini, Analysis of photovoltaic modules with protection diodes in presence of mismatching, in: Proc. of the 21st IEEE Photovoltaic Specialists Conf, Kissimmee, 1990, pp. 1005-1010.
-
4C. Greacen, D. Green, The role of bypass diodes in the failure of solar battery charging stations in Thailand, Solar Energy Materials & Solar Cells 70 (2001) 141-149.
-
5Available online at: http://www.icbase.com/pdf/ONS/ONS24940605.pdf.
-
6E. Maset, E. Sanchis-Kilders, J. Jordan, J. Bta. Ejea, A. Ferreres, J. Millan, et al., High temperature SiC blocking diodes for solar array, in: Proc. of the 2009 Spanish Conf. on Electron Devices, Santiago de Compostela, 2009, pp. 443-446.
-
7E. Maset, E. Sanchis-Kilders, P. Brosselard, X. Jorda, M. Vellvehi, P. Godignon, 300 ℃ SiC blocking diodes for solar array strings, Materials Science Forum 615-617 (2009) 925-928.
-
8E. Maset, E. Sanchis-Kilders, J.B. Ejea, A. Ferreres, J. Jordan, V. Esteve, et al., Accelerated life test for SiC schottky blocking diodes in high-temperature environment, IEEE Trans. on Device and Material Reliability 9 (2009) 557-562.
-
1张红庆,路松峰.简单的晶闸管PSPICE模型[J].微电子学,1993,23(3):28-32. 被引量:1
-
2简岩.从太阳能说起……[J].百科知识,2008(15):1-1.
-
3李志怀,夏冠群,程宗权,黄文奎,伍滨和.PIN结构GaInAsSb红外探测器的PSPICE模型[J].功能材料与器件学报,2003,9(1):34-38.
-
4Yeongchin Chen.ACOUSTICAL TRANSMISSION LINE MODEL FOR ULTRASONIC TRANSDUCERS FOR WIDE-BANDWIDTH APPLICATION[J].Acta Mechanica Solida Sinica,2010,23(2):124-134. 被引量:1
-
5李波,吴小清,姚熹.多层热释电薄膜红外探测器的PSPICE模型[J].半导体光电,2001,22(6):415-419.
-
6黎文模,陈向东.氧化钒薄膜电阻PSPICE模型及特性分析[J].半导体光电,2005,26(B03):115-117. 被引量:2
-
7黎文模,陈向东,段晓峰.氧化钒热敏薄膜非致冷红外探测器的等效模型[J].红外技术,2006,28(3):134-138. 被引量:2
-
8田敏,杨玉东,高安邦.大功率二极管PSPICE模型构建[J].哈尔滨理工大学学报,2011,16(6):58-62. 被引量:1
-
9段天睿,滕照宇,姚勇,李兴红,黄明炳.柔性线路板串扰PSpice仿真分析及应用[J].安全与电磁兼容,2009(5):80-83. 被引量:4
-
10甄志强,赵晓艳,汤正新,闫海涛.垂直腔表面发射半导体激光器的PSPICE模型[J].河南科技大学学报(自然科学版),2007,28(5):98-100. 被引量:3