氢等离子作用下Fe、Co对金刚石膜刻蚀的研究

THE GRAPHITIZATION EFFECT OF DISSOLVED CARBON MATERIAL-FE,CO ON THE CHEMICAL VAPOR-DEPOSITED DIAMOND FILMS UNDER THE EFFECT HYDROGEN PLASMA

金刚石具有很高的硬度,加工困难,为寻找一种刻蚀效率较高的材料,利用微波等离子体化学气相沉积(MPCVD)技术,在氢等离子体作用下,研究了Fe、Co对CVD金刚石膜表面的刻蚀效率。用SEM观察刻蚀效果,用Raman光谱对其表面结构进行表征。结果表明:在氢等离子体的作用下,Fe、Co对金刚石表面都有明显的腐蚀作用,其中Fe的刻蚀速率较高,并且可以通过对溶碳材料的厚度控制,来实现对刻蚀速率与刻蚀量的有效控制。对刻蚀后的样品用混合酸及丙酮处理后,得到了可与原始金刚石相媲美的质量。

As a promising electrical material,CVD diamond with the unique chemical properties is difficult to be etched and fabricated.In the paper,for the purpose of finding a suitable etching material,a certain thickness of polycrystalline diamond films were synthesized in silicon by microwave plasma chemical vapor deposition（MPCVD）and then under the hydrogen plasma and the graphitization effect of dissolved carbon material-Fe,Co,the corrosive action of Fe,Co on the surface of diamond film was investigated.After etching the diamond films surface,the samples were cleaned with mixed acid,then heated in the hydrogen plasma.The cleaned surface was observed with scanning electron microscopy under a secondary electron mode.The corroded surface of the diamond films were characterized by Raman spectroscopy.The results indicated that the corrosive effect of these dissolved carbon metals on the diamond films is clear,with Fe having the largest effect,after the etching of the diamond films,the non-diamond-like carbon left on the diamond films surface are cleaning for the further processing,the high quality which can be comparable with the original quality of diamond is obtained.