磷掺杂对非晶硅薄膜结构及光电性能的影响

Effect of Phosphor-Doped Concentration on the Optical and Electrical Properties of a-Si:H Thin Films

采用射频等离子增强化学气相沉积方法制备了磷掺杂氢化非晶硅(a-Si:H)薄膜。通过Raman散射光谱研究了不同磷烷掺杂含量薄膜的微结构,利用分光光度计对薄膜的厚度、消光系数和折射率进行了模拟,用高阻仪测得了非晶硅薄膜暗电导率。结果表明:薄膜的中程有序度随着磷掺杂量(?)(体积分数)的增加而减小;折射率在(?)为0 8%时最大;在结构无序度随着(?)而增大的影响下,薄膜暗电导率在(?)为1%时达到最大,为8.41×10^(-3)S/cm。

Phosphor doped hydrogenated amorphous silicon（a-Si：H） thin films were fabricated by radio frequency plasma enhanced chemical vapor deposition.The microstructure of the films were investigated by Raman scattering spectrum.The thickness,extinction coefficient and refraction index were simulated by spectrophotometer.Dark conductivity of the films was measured by an electrometer. The results show that the medium-ranged ordering of amorphous network of the thin films becomes worse when the doping contentφincreases.The refractive index reached a maximum whenφwas 0.8%（in volume）.The dark conductivity of the films firstly increased and then decreased as the doping concentration increased,and it was 8.41×10^（-3） S/cm as the maximum value at the doping content of 1%.