摘要
碲铟汞Hg3In2Te6是(In2Te3)x-(Hg3Te3)1-x(x=0.5)的化合物,被称为缺陷相化合物。为了研究In/HgInTe欧姆接触特性,首先运用热电子蒸发技术在单晶Hg3In2Te6表面形成了In/Hg3In2Te6接触,运用传输线模型(TLC)对In/Hg3In2Te6欧姆接触特性进行了分析,结果表明:In/Hg3In2Te6形成了欧姆接触,接触电阻率为6.71×10-2Ω·cm2,粘附性好,电极质量理想,满足于欧姆电极性质的要求。并在此基础上对Hg3In2Te6材料的电学性能运用范德堡方法进行了测试,测试结果表明:Hg3In2Te6单晶在室温下的导电类型为n型,电阻率为6.16×102Ω·cm,载流子浓度为2.888×1013cm-3,载流子迁移率为350cm2/(V·s)。实验表明:该样品载流子浓度降低后,漏电流减小,探测器的噪声降低,从而探测器的能量分辨率得到了提高。
Mercury indium telluride（Hg3In2Te6） corresponds to the composition of system（In2Te3）x-（Hg3Te3）1-x（x=0.5） and belongs to the so-called ＂defect phases＂.To study the Ohmic contact and electrical property ofHgInTe,the In/Hg3In2Te6 contact was fabricated using heated electron evaporation methods on the surface ofHg3In2Te6.The In/Hg3In2Te6 contact character was analyzed by transmission line model.The results show thatIn/Hg3In2Te6 contact is the Ohmic contact with specific contact resistivity of 6.71×10-2 Ω·cm2.And it meetsrequirement of Ohmic contact with the perfect quality.The electrical properties of Hg3In2Te6 crystal weretested by Van Der Pauw.The results show that the crystal is an n-type semiconductor.The resistivity,carrierconcentration,and carrier mobility are 6.16 ×102 Ω·cm,2.888 ×1013 cm-3,350 cm2/（V·s）,respectively.Thatmeans the leak current decrease as the carriers density reaches to a lower level.At the meantime,the detectorobtains a better background noise and energy resolution.
出处
《红外与激光工程》
EI
CSCD
北大核心
2011年第4期709-712,共4页
Infrared and Laser Engineering
基金
国际科技合作计划(2004DFB03400)
