期刊文献+

CMOS有源像素传感器像素级噪声的分析与抑制 被引量:5

Analysis and Reduction of Pixel Noise in CMOS Active Pixel Sensor
原文传递
导出
摘要 像素级的噪声是CMOS图像传感器的主要噪声源之一。针对CMOS有源像素传感器3T结构像素级的噪声问题,分析了3种抑制像素级噪声的方法。分析结果表明,复位晶体管的软复位噪声要小于硬复位噪声的2倍,PMOS管的1/f噪声低于NMOS管的1/f噪声,同时1/f噪声会随着栅面积的减小而增大。通过对像素的噪声分析,完成了3种像素级的集成电路的设计仿真,并采用了0.5μm标准CMOS工艺进行流片制作。测试表明,噪声的相对变化与分析结果吻合。 The pixel noise is one of the fundamental noises in CMOS pactive pixel sensors. We focuse on the pixel noise of CMOS active pixel sensors with three different 3T pixel structures for reducing noise. The analysis results show that soft reset leads to lower noise by a factor of √2 than normal KTC noise level. Besides, the 1/f noise of PMOS is much lower than that of NMOS, and the 1/f noise will become larger with the decrease of grate area. Based on above analysis, the design and simulation of three different CMOS APS are accomplished. Samples are fabricated by standard 0.5 μm CMOS process. Test results show that the changes of noise with different pixels match well with analysis results.
出处 《激光与光电子学进展》 CSCD 北大核心 2011年第5期41-45,共5页 Laser & Optoelectronics Progress
关键词 传感器 低噪声像素设计 CMOS有源像素传感器 3T结构 sensors low noise pixel design CMOS active pixel sensors three transistor structure
  • 相关文献

参考文献11

  • 1O. Yadid-Pecht, B. Mansoorian, E. Fossum et al.. Optimization of noise and responsitivity in CMOS active pixel sensor for detection of ultra low light levels[C]. SPIE, 1997, :3019:125.
  • 2李继军,杜云刚,张丽华,刘全龙,陈建芮.CMOS图像传感器的研究进展[J].激光与光电子学进展,2009,46(4):45-52. 被引量:31
  • 3S. K. Mendis, S. E. Kemeny, R. C. Gee et al.. Progress in CMOS active pixel image sensors[C]. SPIE, 1994, 2172:19.
  • 4Xinyang Wang, Martijn F. Snoeij, Padmakumar R. Rao el al.. A CMOS image sensor with a buried-channel source follower[C]. IEEE. ISSCC, Image Sensors & Technology, 2008. 62-595.
  • 5Y. Degerli, F. Lavernhe, P. Magnanet al.. Band limited l/f noise souree[J]. Electronics Letters, 1999, 3g(7) : 521-522.
  • 6H. Tian, B. Fowler, A. Gamal. Analysis of temporal noise in CMOS photodiode active pixel sensor[J]. IEEE. J. Solid-State Circuits, 2001, 36(1) : 92-101.
  • 7Igor Brouk, Amikam Nemirovsky, Kamal Alameh et al.. Analysis of noise in CMOS image sensor based on a unified time- dependent approach[J]. Solid-State Electronics, 2010, 54 : 28-36.
  • 8张智,袁祥辉,黄友恕,吕果林.一种用于大面积CMOS FPA的相关双采样保持电路[J].半导体光电,2003,24(4):260-263. 被引量:4
  • 9Jin X. L. ,Chen J.. Novel principle and realization of simple low-power low-noise correlated double sampling for CMOS pixel readout circuit[C]. IEEE. C. Electron Device and Solid-State Circuits, 2003. 113.
  • 10E. Mgonquin Road, Schaumburg. Noise analysis of correlated double sampling SC-integrators[C]. IEEE. I. S. Circuit and systems, 2002.

二级参考文献47

  • 1袁祥辉,吕果林,黄友恕,李兵.红外焦平面CMOS单元读出电路[J].半导体光电,1999,20(2):123-126. 被引量:23
  • 2D. Renshaw, P.B. Denyer, M. Lu et al.. A single-chip video camera with on-chip automatic exposure control[C]. Proc.ISIC- 91, Singapore, 1991:346-349.
  • 3P.B. Denyer, D. Renshaw, G. Wang et al.. CMOS image sensors for multimedia applications[C]. Proc.IEEE CICC 93, San Diego, 1993.
  • 4Pierre Magnan. Detection of visible photons in CCD and CMOS: a comparative view[J]. Nuclear Instruments and Methods in Physics Research A, 2003, 504:199-212.
  • 5P. Seitz. Solid-State Image Sensing[M]. New York: Academic Press, 2000,165-222.
  • 6E1 Gamal A., Eltoukhy H.. CMOS image sensors[J]. Circuits and Devices Magazine, IEEE, 2005,21(3): 6-20.
  • 7Modha K. N., Stockford I. M., Light R etal.. A custom CMOS sensor for pyramidal adaptive optics system[C]. IEEE Mixed-Signals, Sensors, and 'Systems Test Workshop, Vancouver, 2008:1-4.
  • 8K.Yoon, C.Kim, B. Lee et al.. Single-chip CMOS image sensor for mobile application[J]. IEEE Journal of Solid-State Circuits, 2002,37(2): 1839-1845.
  • 9M. Hilleb rand, N. Stevanovic, B. Hosticka et al.. High speed camera system using a CMOS image sens or [C]. Proceedings of the IEEE Intelligent Vehicles Symposium, 2000,656-661.
  • 10Sugiyama Y., Takumi M., Toyoda H. et al.. A high-speed CMOS image sensor with profile data acquiring function[J]. IEEE Journal of Solid-State Circuits, 2005, 40(12): 2816-2823.

共引文献42

同被引文献54

引证文献5

二级引证文献12

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部