摘要
CMP已成为IC制造中的关键工艺之一,其材料去除机制及理论模型的研究已经成为当前CMP研究的热点。综述基于流体润滑、磨粒磨损、化学作用、原子/分子去除等不同机制的集成电路芯片化学机械抛光(CMP)材料去除率的理论模型的研究现状和进展,分析和比较基于不同假设的理论模型,展望CMP材料去除机制研究的未来发展方向。CMP理论真正应用于实际生产指导,许多影响因素的定量研究还要细化,抛光盘的黏弹性和抛光液的流体动力学性能对CMP过程的影响还需深入研究。
Chemical mechanical polishing（CMP）is one of the most important processes in IC fabrication.The mechanism model is the hotspot in CMP research in current status.A review was given on the current state of and recent progress in the study on the models of material removal mechanisms based on flow wear of slurry,abrasive wear,chemical action and atom/molecular removal during chemical mechanical polishing（CMP）.A summary was made on the research progress about the models.The different assumptions of the models were investigated and the models were compared.CMP models and its key problems about CMP in the future were prospected.The quantitative studies of many influential factors of CMP must be extended in detail before CMP model can be used to direct IC fabrication authentically.The affects of visco-elasticity of pad and fluent properties of slurry on CMP process need in-depth studies.
出处
《润滑与密封》
CAS
CSCD
北大核心
2011年第5期101-105,121,共6页
Lubrication Engineering
基金
江苏省自然科学基金项目(BK2004020)
教育部回国人员启动基金项目(教外司留[2004]527号)
清华大学摩擦学国家重点实验室开放基金项目(SKLT04-06)
江南大学重大基金项目(207000-21054200)
江南大学预研基金项目(207000-52210434)
关键词
机械化学抛光
材料去除机制
模型
芯片
chemical mechanical polishing
material removal mechanism
model
wafer
