6～18 GHz宽带GaN功率放大器MMIC

6～18 GHz Broadband Power Amplifier MMICBased on GaN Technology

报道了一款采用三级拓扑结构的6～18 GHz宽带单片微波功率放大器芯片。放大器采用了微带结构,并使用电抗匹配进行设计,减小输出匹配电路的损耗和提高效率。经匹配优化后放大器在6～18 GHz整个频带内脉冲输出功率大于6 W,小信号增益达到25 dB,在14 GHz频点处峰值输出功率达到10 W,对应的功率附加效率为21%。放大器芯片采用南京电子器件研究所的0.25μm GaN HEMT 76.2 mm圆片工艺制造,尺寸为2.3 mm×1.1mm。

A 6～18 GHz broadband GaN MMIC power amplifier with three-stage topologywas developed. The amplifier was designed in micro-strip technology and reactance matchingnetwork was adopted to reduce insert loss of the output stage and improve the MMIC＇sassociated efficiency.The amplifier provided a flat small signal gain of 25 dB and a pulsedsaturated output power of 6 W at VDS=28 V over the 6 GHz to 18 GHz frequency range. A peakoutput power of 10 W with power added efficiency of 21% was achieved at 14 GHz. The amplifierchip with size of 2.3 mm × 1.1 mm is processed by 76. 2 mm, 0. 25 μm GaN HEMT MMICtechnology in Nanjing Electronic Devices Institute.