摘要
介绍了平面栅电子注入增强型栅极晶体管(IEGT)的闩锁效应,讨论了温度对关键特性参数如通态压降、正向阻断电压及开关时间的影响。利用ISE软件模拟了IEGT在高温下的导通特性、阻断特性和开关特性,分析了IEGT在高温下的失效原因,提出了改善其高温安全工作区(SOA)的措施。
The latch-up effect of the planer gate electron injection enhancement gate transistor（IEGT） is introduced.Influences of temperature on the key characteristic parameters,suchas,the on-state voltage drop,forward blocking voltage,switching time,are discussed.Conducting,blocking and switching characteristics at high temperature of IEGT are simulated by ISE simulator.Lastly,the failure reason and safe operation area（SOA） of IEGT devices at high temperature is analyzed and the improvement measures are presented.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2011年第2期130-135,共6页
Research & Progress of SSE
基金
Supported by the Special Science and Technology Plan of Education Bureau of Shaanxi Province(08JK379)
关键词
功率半导体器件
电子注入增强型栅极晶体管
高温
闩锁
失效分析
power semiconductor device
injection enhancement gate transistor（IEGT）
high temperature
latch-up
failure analysis
