摘要
通过对ISFET敏感机理的分析,根据表面基模型,建立了悬浮栅结构ISFET器件的HSPICE行为模型,并对其静态输出特性,转移特性,以及pH值与界面势的关系进行了仿真,仿真结果表明:该模型与ISFET的理论和实验数据吻合较好。为ISFET/REFET差分结构集成传感器芯片设计提供了重要的理论参考价值。
A HSPICE behavioral macro model for the floating-gate ion sensitive field effect transistors（ISFET）is founded based on the site-binding model,the static output characteristics.Transfer characteristics of the ISFET and the relationship between the pH value and interface voltage are simulated.Simulation results show that the model and the theory of ISFET are correspond with experimental data.It provide important theoretical reference for design of differential integrated ISFET/REFET sensor chip.
出处
《传感器与微系统》
CSCD
北大核心
2011年第5期5-7,共3页
Transducer and Microsystem Technologies
基金
陕西省教育厅专项科研计划资助项目(07JK295)
