摘要
考虑3种特征尺寸的超深亚微米SOI NMOSFET的中子辐照效应。分析了中子位移辐照损伤机理,数值模拟了3种器件输出特性曲线随能量为1MeV的等效中子在不同辐照注量下的变化关系及中子辐照环境下器件工艺参数对超深亚微米SOI NMOSFET的影响。数值模拟部分结果与反应堆中子辐照实验结果一致。
The neutron radiation effects on three different sizes of super deep submicron SOI NMOSFET（0.25 μm,0.18 μm and 0.09 μm） were studied.The mechanisms of neutron radiation damage were analyzed.The output characteristic parameters of the three types of devices changing with different 1 MeV equivalent neutron fluences and the influence of the process parameters of the devices on neutron radiation damage were simulated.The results of simulation and experiment agree well.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
2011年第4期456-460,共5页
Atomic Energy Science and Technology
基金
教育部博士点基金资助项目(20100201110018)
