PECVD法淀积不同应力状态氮化硅薄膜工艺研究

Study on the Stress of Silicon Nitride Film Deposited by PECVD

等离子增强化学气相淀积法(PECVD)淀积的氮化硅薄膜具有沉积温度低、生长速率高、均匀性好等优点,在微电子机械系统(Micro-Electromechanical System,MEMS)中的应用越来越广泛,研究其应力状态对研制MEMS器件和系统具有重要意义。本文在大量实验的基础上,淀积出高压应力、低压应力、微应力、低张应力和高张应力五种不同应力状态的氮化硅薄膜,并对残余应力与SiH4/NH3流量比例、射频功率之间的关系进行了说明。

Silicon nitride film made by the method of plasma enhanced chemical vapor deposition（PECVD） is widely used in the Micro-Electromechanical System（MEMS） because of its such excellent properties as lower deposition temperature,good uniformity and quick deposition rates etc.It is important to investigate the effect of processing parameter on the residual stress of silicon nitride film in order to fabricate stress-free or stress-compensated beam or membrane.Silicon nitride films of high compressive stress、low compressive stress、stress-free、low tensile stress and high tensile stress were deposited in a double-chamber PECVD equipment.The effects of ratio flow of SiH4/NH3 and radio-frequency power on the stress of SiNx film were discussed to assist future MEMS development.