电阻开关式非挥发性随机存储器的机理及其材料

Resistance Switching Non-Volatile Random Access Memory and Its Materials

在众多新型非挥发存储器中,电阻式存储器具有结构简单,存储密度高,读写速度快,数据保持时间长,制作方法与传统CMOS工艺兼容性好等优点成为研究的热点。本文简要回顾了电阻式存储器器件的结构、机制、材料以及制备方法,并讨论了电阻式存储器的单极性和双极性电阻开关特性,最后着重介绍了电阻开关特性的块体主导机制和界面主导机制。

Among various new non-volatile memories,resistance random access memory（ReRAM） is a research hotspot due to its characteristics such as simple structure,high density,high operation speed,long retention time,good compatibility with traditional CMOS technologies,and so on.In this paper,the structures,materials,and preparation methods of ReRAM are briefly reviewed;then the behaviors of unpolar resistive switching and bipolar resistive switching are discussed;and finally the bulk control mechanism and the interface control mechanism of resistance switching behaviors are introduced.