采用Al缓冲层在蓝宝石衬底上合成GaN多晶薄膜

Growth of GaN Polycrystalline Film Using Al Buffer Layer on Sapphire Substrate by CVD

采用CVD法以金属镓(Ga)和氨气(NH3)为原料,在镀有Al膜的蓝宝石衬底上成功地制备了GaN多晶薄膜。采用高分辨X射线衍射仪(HRXRD)、场发射电子扫描电镜(FESEM)、原子力显微镜(AFM)和光致发光能谱(PL)对样品进行了成分、形貌、表面粗糙度和发光性能分析。结果表明,制备的GaN薄膜为结晶性较好的六方纤锌矿GaN多晶薄膜,用266nm的激光作为激发光源时,光致发光谱中除出现354nm的近带边发射峰外,同时还观察到中心波长位于530nm附近的黄光发光峰及中心波长位于约637nm的红光发光峰。

GaN polycrystalline film was synthesized by CVD using metallic gallium and ammonia as source materials on A1203 （1111） substrate, and Al film was used as buffer layer. X-ray difffaction（XRD）, field emission scanning electron microscopy（FESEM）, atomic force microscopy（AFM）, and photo-luminescence（PL） were used to characterize the samples. The results show that the products are comprised of hexagonal wurtzite structure. Its RMS roughness is about 2. 287nm. With the PL analysis（266nm, YAG/Nd laser sources） , it has been found that a main peak for band edge emission at 354nm, a weak yellow luminescence peak at near 530nm and a red luminescence peak at near 637nm.