Si(111)衬底上生长的ZnO薄膜的光学特性研究

The Optical Properties of ZnO Films Grew on Si(111) Substrate

利用等离子体分子束外延(P-MBE)设备在S i(111)衬底上制备了高质量的ZnO薄膜。通过扫描电镜观察了ZnO薄膜的表面形貌为的六角结构。X射线衍射谱显示ZnO薄膜为c轴择优取向的,ZnO(002)取向X射线衍射峰的最大半宽度仅0.18°。并通过室温和变温发光谱对ZnO薄膜的发光特性进行了研究。在低温下ZnO的发光以施主束缚激子为主,室温下发光的主要来源为ZnO的自由激子发光。

The high quality ZnO films were grown on Si（111） substrates by plasma-assisted molecular beam epitaxy（P-MBE）.The ZnO hexagonal structure was observed by scanning electronic microscope（SEM）.X-ray diffraction（XRD） showed that the ZnO was wurtzite structure along c-axis direction.The full wave at half Maximum（FWHM） of the（002） was 0.18°.The optical properties of ZnO were studied by the room temperature（RT） and temperature-dependence photoluminescence（PL）.The PL spectra of ZnO attributed to donor bound exciton（D0X） at low temperature and free emission（FE） emission at RT.