摘要
利用等离子体分子束外延(P-MBE)设备在S i(111)衬底上制备了高质量的ZnO薄膜。通过扫描电镜观察了ZnO薄膜的表面形貌为的六角结构。X射线衍射谱显示ZnO薄膜为c轴择优取向的,ZnO(002)取向X射线衍射峰的最大半宽度仅0.18°。并通过室温和变温发光谱对ZnO薄膜的发光特性进行了研究。在低温下ZnO的发光以施主束缚激子为主,室温下发光的主要来源为ZnO的自由激子发光。
The high quality ZnO films were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy(P-MBE).The ZnO hexagonal structure was observed by scanning electronic microscope(SEM).X-ray diffraction(XRD) showed that the ZnO was wurtzite structure along c-axis direction.The full wave at half Maximum(FWHM) of the(002) was 0.18°.The optical properties of ZnO were studied by the room temperature(RT) and temperature-dependence photoluminescence(PL).The PL spectra of ZnO attributed to donor bound exciton(D0X) at low temperature and free emission(FE) emission at RT.
出处
《广州化工》
CAS
2011年第9期10-11,26,共3页
GuangZhou Chemical Industry
基金
国家自然科学基金(60976036)
广东省自然科学基金(8151806001000009)
广东省育苗项目(LYM10063)项目资助