射频辉光放电过程中工艺参数对极板自负偏压的影响

Effect of R F Discharhe Parameters on the Substrate Bias

系统研究了射频等离子辉光放电过程中工艺参数对极板自负偏压的影响， 结果表明射频辉光放电过程中下极板上产生的自直流负偏压Ｖ 与电源功率Ｗ 和工作压强Ｐ 的关系为Ｖ＝ｋ Ｗ／ Ｐ。极板负偏压随极板间距的增加而增大。不同放电气体对极板自负偏压产生不同的影响。

The effect of radio frequency (r f )discharge parameters on the substrate bias was systematically studied Results show that the substrate bias V is related to the r f power W and gas pressure P by V=kW/P The increase of distance between two electrode leads to the increase of substrate bias Substrate bias is greatly affected by the discharge characteristics of different gases