摘要
Transparent conducting antimony doped tin oxide （Sb：SnO2） thin films have been deposited onto pre- heated glass substrates using a spray pyrolysis technique by varying the quantity of spraying solution. The structural, morphological, X-ray photoelectron spectroscopy, optical, photoluminescence and electrical properties of these films have been studied. It is found that the films are polycrystalline in nature with a tetragonal crystal structure having orientation along the （211） and （112） planes. Polyhedrons like grains appear in the FE-SEM images. The average grain size increases with increasing spraying quantity. The compositional analysis and electronic behaviour of Sb：SnO2 thin films were studied using X-ray photoelectron spectroscopy. The binding energy of Sn3ds/2 for all samples shows the Sn^4＋ bonding state from SnO2. An intensive violet luminescence peak near 395 nm is observed at room temperature due to oxygen vacancies or donor levels formed by Sb^5＋ ions. The film deposited with 20 cc solution shows 70 % transmittance at 550 nm leading to the highest figure of merit （2.11 × 10^-3 Ω^-1）. The resistivity and carrier concentration vary over 1.22 × 10^-3 to 0.89 × 10^-3Ω cm and 5.19 ×10^20 to 8.52 × 10^20 cm^-3, respectively.
Transparent conducting antimony doped tin oxide （Sb：SnO2） thin films have been deposited onto pre- heated glass substrates using a spray pyrolysis technique by varying the quantity of spraying solution. The structural, morphological, X-ray photoelectron spectroscopy, optical, photoluminescence and electrical properties of these films have been studied. It is found that the films are polycrystalline in nature with a tetragonal crystal structure having orientation along the （211） and （112） planes. Polyhedrons like grains appear in the FE-SEM images. The average grain size increases with increasing spraying quantity. The compositional analysis and electronic behaviour of Sb：SnO2 thin films were studied using X-ray photoelectron spectroscopy. The binding energy of Sn3ds/2 for all samples shows the Sn^4＋ bonding state from SnO2. An intensive violet luminescence peak near 395 nm is observed at room temperature due to oxygen vacancies or donor levels formed by Sb^5＋ ions. The film deposited with 20 cc solution shows 70 % transmittance at 550 nm leading to the highest figure of merit （2.11 × 10^-3 Ω^-1）. The resistivity and carrier concentration vary over 1.22 × 10^-3 to 0.89 × 10^-3Ω cm and 5.19 ×10^20 to 8.52 × 10^20 cm^-3, respectively.
