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An analytical model for the surface electrical field distribution of LDMOSFETs with shield rings

An analytical model for the surface electrical field distribution of LDMOSFETs with shield rings
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摘要 An analytical model of an LDMOSFET with a shield ring is established according to the 2D Poisson equation. Surface electrical field distribution along the drift region is obtained from this model and the influence of shield length and oxide thickness on the electrical field distribution is studied. The robustness of this model is verified using ISE TCAD simulation tools. The breakdown voltage of a specific device is also calculated and the result is in good agreement with experimental data. An analytical model of an LDMOSFET with a shield ring is established according to the 2D Poisson equation. Surface electrical field distribution along the drift region is obtained from this model and the influence of shield length and oxide thickness on the electrical field distribution is studied. The robustness of this model is verified using ISE TCAD simulation tools. The breakdown voltage of a specific device is also calculated and the result is in good agreement with experimental data.
作者 陈蕾 杜寰
机构地区 Institute of Microelectronics
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第5期48-51,共4页 半导体学报（英文版）
关键词 RF LDMOS shield ring RESURF surface electrical field drift region RF LDMOS shield ring RESURF surface electrical field drift region
分类号 O472.4 [理学—半导体物理]
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共引文献2

Journal of Semiconductors
2011年 第5期

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