摘要
Based on the platform of 0.35μm PDSOI CMOS process technology, the partially depleted siliconon-insulator dynamic threshold voltage （PDSOI DT） NMOS with an H-gate was implemented. The analog characteristics and RF characteristics of the gate-body contacted dynamic threshold voltage H-gate NMOS and con- ventional H-gate NMOS were performed and compared. Furthermore, the fundamental operation principle and physical mechanism of the PDSOI H-gate DTMOS compared with the conventional H-gate NMOS are analyzed in detail. The results indicate that the cutoff frequency can reach 40 GHz and the maximum oscillation frequency 29.43 GHz as Vgs = 0.7 V and Vas = 1 V.
Based on the platform of 0.35μm PDSOI CMOS process technology, the partially depleted siliconon-insulator dynamic threshold voltage （PDSOI DT） NMOS with an H-gate was implemented. The analog characteristics and RF characteristics of the gate-body contacted dynamic threshold voltage H-gate NMOS and con- ventional H-gate NMOS were performed and compared. Furthermore, the fundamental operation principle and physical mechanism of the PDSOI H-gate DTMOS compared with the conventional H-gate NMOS are analyzed in detail. The results indicate that the cutoff frequency can reach 40 GHz and the maximum oscillation frequency 29.43 GHz as Vgs = 0.7 V and Vas = 1 V.
基金
Project supported by the State Key Development Program for Basic Research of China(No.2006CB3027-01).
