摘要
ZnO作为一种宽带隙直接跃迁半导体材料,具有优良的闪烁性能,在掺杂Ga、In等元素后具有潜在的高光输出性能,成为用于D-T中子发生器中α粒子探测的首选闪烁材料。本文主要分析了ZnO基闪烁材料的研究现状以及ZnO基闪烁材料中存在的问题,并针对目前存在的问题提出了解决的思路。
As a wide band gap direct transition semiconductor material,because of the good scintillation properties,ZnO contains a potentially high light output performance when doped Ga,In and other elements,which makes ZnO become a preferred scintillation materials using in D-T neutron generator for the α particle detection.The article analyzed the development and the existing problems of ZnO-based scintillation materials and put forward a solution for the current problems.
出处
《中国陶瓷》
CAS
CSCD
北大核心
2011年第5期1-4,共4页
China Ceramics
关键词
ZNO
超快
闪烁
ZnO
ultrafast
scintillation materials
