摘要
采用溶胶-凝胶法合成高纯(<50 mg·kg-1 SiO2)Ce0.8Nd0.2O1.9(NDC)和SiO2含量为500 mg·kg-1的Ce0.8Nd0.2O1.9(NDCSi)体系,将1mol%MoO3分别加入到NDC和NDCSi体系,比较研究MoO3掺杂对体系微观结构和电性能的影响。通过X射线衍射(XRD)和场发射扫描电子显微镜(FE-SEM)对材料进行表征,交流阻抗(AC)分析仪测试材料的电阻。结果表明:MoO3和SiO2的加入均没有破坏体系的立方莹石结构;MoO3掺杂能提高NDC和NDCSi陶瓷材料的致密度,提高其晶界电导率和总电导率;MoO3掺入NDC体系具有烧结助剂的作用,掺入NDCSi体系既具有烧结助剂的作用,又具有晶界改善剂的作用。
The Ce0.8Nd0.2O1.9（NDC）（50 mg·kg-1 SiO2） and 500 mg·kg-1 SiO2 of Ce0.8Nd0.2O1.9（NDCSi） with and without 1mol% MoO3 systems were prepared by the so-gel method.The characterizations of samples were investigated by X-ray diffraction（XRD）,field emission scanning electron microscopy（FE-SEM）,and AC impedance spectroscopy.The XRD results showed that these materials were single phases with a cubic fluorite-type structure.The addition of MoO3 improved the densification for NDC and NDCSi.The grain boundary and total conductivity of NDC and NDCSi with 1mol% MoO3 systems increased.Therefore,MoO3 should be considered to be not only an effective sintering aid,but also a new scavenger of the grain boundary for NDCSi.
出处
《无机化学学报》
SCIE
CAS
CSCD
北大核心
2011年第5期860-864,共5页
Chinese Journal of Inorganic Chemistry
基金
国家自然科学基金(No.20871023,20671088)
吉林省科技发展计划(No.20070510,20101549)资助项目
