磁控溅射与电弧离子镀制备TiN薄膜的比较

Comparison of TiN films prepared by magnetron sputtering and arc ion plating

分别采用磁控溅射和电弧离子镀在抛光后的W18Cr4V高速钢基体表面沉积TiN膜层,利用纳米力学系统、扫描电子显微镜(SEM)和X射线衍射仪(XRD)对薄膜进行测试,比较了两种方法所制备的薄膜的异同.结果表明:磁控溅射所制备的薄膜表面平整,但沉积速率和硬度均低于电弧离子镀制备的薄膜.

TiN films were deposited onto the well-polished W18Cr4V by DC magnetron sputtering and arc ion plating,respectively.Both advantages and shortcomings of these two methods were discussed according to the microstructure and properties of the films measured by nano-indenter,SEM,as well as XRD.It was concluded that the films prepared by magnetron sputtering had cleaner surfaces but less deposition rate as well as lower hardness,when compared with those deposited by arc ion plating.