磷(P_(31)^+)注入Si的快速退火电特性

Electrical Property of Rapid Annealing for P_(31)^+ Implanted Silicon

本文报告了P_(31)^+离子注入Si中快速退火的电特性研究结果。采用高精度四探针测量了P_(31)^+注入层在不同注入剂量下,薄层电阻与退火温度和退火时间的关系。采用自动电化学测量仪PN-4200,测量了P_(31)^+离子注入Si中的载流子剖面分布。

Reported in this paper is an investigation of electrical property of rapid annealing for P31+ implanted silicon. Sheet resistance versus annealing time/temperature for P31+ implanted layers at different dosages were measured using high accuracy four-point probe, and carrier profiles for P31+ implanted silicon were measured with PN4200.