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2微米CMOS工艺工程技术研究 被引量:1

A Study on 2μm CMOS Process Engineering
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摘要 本文把工艺工程技术作为一个专门的技术领域,从集成电路制造工艺技术中分离出来,并对它进行了系统的分析研究。一个完整的大规模和超大规模集成电路制造工艺技术应包括两个大的方面:一个是单项工艺技术,另一个是工艺集成技术,亦即工艺工程技术。工艺工程技术包括:(1)器件设计,亦即器件的纵向横向结构参数和主要电参数的设计;(2)工艺设计规则设计;(3) Being isolated from IC fabrication processing, the technique of process engineering is dealt with in this paper as a specific field, of which a systematic analysis and investigation are made. Development of complete LSI and VLSI fabrication processing involves two phases: unity processing and process engineering (process integration). Included in the process engineering are designing of the structural parameters of the device and process design rules,designing of process flow and major process parameters for the device and designing of process quality assurance. The technique of process engineering for 2μm CMOS devices is reviewed in detail and a set of data for designing reference is also provided in the paper.
作者 王万业
出处 《微电子学》 CAS CSCD 1990年第2期70-79,共10页 Microelectronics
关键词 VLSI CMOS 工艺工程 工艺 CMOS IC, Process engineering, IC fabrication technology, VLSI
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