摘要
本文首先在总体上概述了集成电路工艺技术的发展。从双极工艺和MOS工艺两大分支说明了其发展过程、特点及现状水平,阐述了器件发展与工艺发展的相互关系。然后分节叙述了各个重点工艺技术的发展趋势与现状。
An overall review of the evolvement of processing technologies for Si ICs is made in the paper. Starting from two main branches, bipolar and MOS technologies,the evolving process, characteristics and the state-of-the-art of Si IC technologies are illustrated and the dependence of advances of the device on the progress of the processing technologies is also elaborated. Einally, the developing trend and status quo of critical technologies are described.
出处
《微电子学》
CAS
CSCD
1990年第2期14-30,共17页
Microelectronics
关键词
硅集成电路
工艺
双极型
MOS
Si integrated circuits, Processing technology, Bipolar technology, MOS technology