高温微电子学—Ⅰ硅器件的高温特性研究

High Temperature Microelectronics—I A Study on High Temperature Characteristics of Silicon Devices

本文详细介绍了硅器件的高温理论以及制作的进展,分析了MOSFET的高温特性和失效模式,指出了改善MOSFET高温性能和提高上限温度的方法。

A detailed description of high temperature theories for silicon devices and the progress in the fabrication of high temperature silicon devices is presented in the paper. The high temperature characteristics and failure modes of MOSFETs have been analyzed and methods of improving high temperature performance and upper limit of MOSFETs were proposed.