摘要
本文简述了集成电路中常用的聚酰亚胺、磷蒸汽处理SiO_2覆盖、SiO_2和Si_3N_4混合膜三种表面钝化工艺,并对其特征作了一些分析。提出了根据集成电路的性能要求和所选择后工序的条件,恰当地选择一种钝化膜的方法和原则。
Three surface passivation technologies for ICs, polyimide, POCl3 treatment with Si02 coverage and SiO2/Si3N4 mixed films, are compared and their character listics is analyzed. It is proposed that the selection of a certain passivation film depend on the requirements for the IC's performance and the conditions for subsequent procsses chosen for the circuit.
出处
《微电子学》
CAS
CSCD
1990年第5期6-10,共5页
Microelectronics
关键词
集成电路
聚酰亚胺
纯化膜
Integrated circuit, Surface passivation, Polyimide