深U型槽的反应离子刻蚀技术

Reactive Ion Etching of Deep U Trench

在VLSI 工艺中,U 型槽隔离方法很重要.本文报道了采用CF_4、SF_6、Ar、Cl_2、O_2、BCl_3、CHF_3等气体及其混合物进行的RIE(反应离子刻蚀)实验,发现Cl_2+Ar 最适用于深U 型槽的刻蚀,并成功地刻出了2μm 宽、6μm 深的U 型槽.

Deep U trench isolation technique is one ofthe very important techniques in VLSI.A experi-mental study of the use of reactive ion etchingdeep U trench has been made with CF_4、SF_6、Ar、O_2、Cl_2、BCl_3、and their mixture.The Cl_2+Ar gas mixture can use to etch deep U trenchand that the U trench of 2μm width 6μm depthhas been made successfully.