Zn_(1-x-y)Na_xCo_yO薄膜的脉冲激光沉积制备及表征

Growth and chracterization of Zn_(1-x-y)Na_xCo_yO thin films prepared by pulsed laser deposition

采用脉冲激光沉积技术,在Si(111)衬底上成功制备出不同含量Na,Co共掺的ZnO薄膜.利用X射线衍射仪、原子力显微镜、荧光光谱仪以及四探针电阻率测试台对薄膜的结构、表面形貌和光电性质进行了表征.重点讨论了不同掺杂浓度对薄膜光电性质的影响.结果表明Na,Co共掺没有改变ZnO的六角纤锌矿结构且掺杂导致薄膜仅有的的紫外发光峰出现红移.当Na,Co掺杂浓度分别为10时,峰值最强且红移最明显,发光峰波长为397nm,薄膜的电阻率最低,达到了8.34×10-1Ω.cm.深入讨论了上述结果的产生原因.

Zn1-x-yNaxCoyO thin films were prepared by pulsed laser deposition（PLD） on Si（111） substrates.The X-ray diffraction（XRD）,atomic force microscopy（AFM）,fluorescence spectrometer and the Four-probe tester were used respectively to investigate the structure,surface structure,optical and electrical properties of the thin films.The optical and electrical properties of Zn1-x-y NaxCoyO doped with different Na-Co concentrations are investigated.The result indicates that the structure of films are zincite and the doping of Na-Co leads to the red-shift of the UV emission peak of ZnO.When the doping concentration of both Na and Go are 10,the film has the highest fluoresence intensity located at 397 nm,and the lowest resistivity of 8.34 × 10-1 Ω.cm is detected in this film.The reasons of above-mentioned phenomena are discussed in depth.