多晶SiGe栅量子阱pMOSFET阈值电压模型

Threshold voltage model for quantum-well channel pMOSFET with poly SiGe gate

本文基于多晶SiGe栅量子阱SiGe pMOSFET器件物理,考虑沟道反型时自由载流子对器件纵向电势的影响,通过求解泊松方程,建立了p+多晶SiGe栅量子阱沟道pMOS阈值电压和表面寄生沟道开启电压模型.应用MATLAB对该器件模型进行了数值分析,讨论了多晶Si1-yGey栅Ge组分、Si1-xGex量子阱沟道Ge组分、栅氧化层厚度、Si帽层厚度、沟道区掺杂浓度和衬底掺杂浓度对量子阱沟道阈值电压和表面寄生沟道开启电压的影响,获得了抑制表面寄生沟道开启的途径.模型所得结果与文献报道结果及ISE仿真结果一致.

In this paper,threshold voltage model of quantum-well channel pMOSFET with p ＋ polycrystalline SiGe gate and its cut-in voltage model were established based on solving Poisson equation while considering the impact of free carrier.The effects of relevant parameters（Ge concentration of poly SiGe gate,Ge concentration of quantum-well SiGe channel,thickness of oxide layer,thickness of Si cap layer,doping content of quantum-well SiGe channel,and doping content of substrate） on threshold voltage and cut-in voltage of the parasitic channel was analysed by numerical analysis,and obtained the methods to restrain the opening of parasitic channel.The results of the models are in good agreement wih that of experiment reported as well as of ISE simulation.