摘要
本文报道的研究结果表明,PECVD硅化钛膜的组份强烈地依赖于SiH_4/Ar流量比;其结构的稳定性随退火温度和时间的增加而增加;其腐蚀特性及化学稳定性良好。
The results reported in this paper show thatfor PECVD Titanium Silicide,the compositionsdepends on the flow ratio of SiH_4 to Ar,the sta-bility of their structure increases with the tempera-ture and the time of anealing process,their resistanceto cleaning chemicale used in IC processing andtheir etched performance in etchant solution areboth very good.
出处
《微电子学与计算机》
CSCD
北大核心
1990年第6期39-41,共3页
Microelectronics & Computer
