期刊文献+

富氮MeN_x(Me=Ti,Zr,Hf)薄膜的结构与红外光学性能

Structure and IR optical property of nitrogen-rich MeN_x(Me=Ti,Zr,Hf)films
下载PDF
导出
摘要 用射频反应磁控溅射方法制备了MeNx(Me=Ti、Zr、Hf)薄膜,研究了在富N2条件下不同的N2/Ar流量比对薄膜结构和光学性能的影响。掠角X射线衍射的分析结果表明,所制得的富氮的TiNx薄膜主要由TiN所组成,而富氮的ZrNx、HfNx薄膜则具有非晶态的结构。用分光光度计和傅里叶红外仪对薄膜的光学透过率的测试表明,TiNx薄膜在可见光及红外波段基本上是不透的,而ZrNx、HfNx薄膜在相应的波长范围,特别是在红外波段则有较高的光学透过率。比较不同N2/Ar流量比条件下制备的MeNx(Me=Zr、Hf)薄膜发现,ZrNx、HfNx两种薄膜的结构和光学性能没有发生显著的变化。最后,在ZnS衬底上制备的HfNx薄膜,在不降低ZnS的光学透过率的情况下,显著地提高了ZnS的表面硬度。因此,HfNx薄膜有望成为红外光学窗口的一种新的保护膜材料。 MeNx(Me=Ti,Zr,Hf)films have been prepared by using the reactive radio frequency magnetron sputtering technique,and the N2/Ar flow rate ratio of the process has been systematically varied,so that its effects on structure and optical properties of the films could be studied.Results of X-ray diffraction experiments showed that the nitrogen-rich TiNx films are mainly composed of TiN phase,but the nitrogen-rich MeNx(Me=Zr,Hf)films are amorphous in their structure.Optical transmittance of the MeNx(Me=Ti,Zr,Hf)films was measured in the wavelength range of 0.4-12.5μm,and the results show that the TiNx films were opaque,but the ZrNx and HfNx films were transparent,especially in the infrared regimes.The results also proved that the variation in the N2/Ar flow rate ratio had little effects on the structure as well as the optical properties of the MeNx(Me=Zr,Hf)films.It is also found that HfNx films deposited on ZnS substrates could significantly increase the surface hardness of the samples,and at the same time,the films would maintain the transmittance of the ZnS material.Therefore,HfNx films have the potential to become a new material for protecting ZnS infrared windows.
出处 《功能材料》 EI CAS CSCD 北大核心 2011年第5期785-787,792,共4页 Journal of Functional Materials
基金 国家自然科学基金资助项目(10675017)
关键词 磁控溅射 红外波段 透过率 保护膜 magnetron sputtering infrared regimes transmittance protective film
  • 相关文献

参考文献14

  • 1苏小平,余怀之,褚乃林,黄炫云.半导体材料的红外光学特性及应用[J].稀有金属,1997,21(6):469-474. 被引量:12
  • 2Wang Y C,Shang D M,et al. [J]. Phys Rev B,2000,61 (16):10609-10614.
  • 3Xu M,Wang S Y,Yin G,et al. [J]. Applied Physics Let- ters, 2006,89 : 151908.
  • 4Sui Y R,Xu Y,Yao B,et al.[J]. Applied Surface Science, 2009,255 (12) : 6355-6358.
  • 5Rizzo A, Signore M A, Mirenghi L, et al. [J]. Thin Solid Films, 2006,515(4) : 1486-1493.
  • 6Zerr A,Miehe G,Ralf R.[EJ]. Nature Materials,2003,2:185-189.
  • 7Dmytro A, Dzivenko, Zerr A, et al. [J]. Solid State Com- munications, 2006,139 (6) : 255-258.
  • 8Chhowalla M,Unalan H E. [J]. Nature Material,2005,4: 317-322.
  • 9Teter D M. [J]. MRS Bulletin,1998,23(1):22-27.
  • 10Yajima A,Segawa Y, Matsuzaki R, et al. [J]. Bulletin of the Chemical Society of Japan,1983,56(9):2638-2642.

二级参考文献2

  • 1黄德群等.新型光学材料[M]科学出版社,1991.
  • 2王季陶,刘明登.半导体材料[M]高等教育出版社,1990.

共引文献11

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部