摘要
采用PECVD 法淀积的TiSi_2薄膜与硅衬底能形成良好的接触,其肖特基势垒高度经J-V 和C-V法测试得知,分别为0.65eV 和0.58eV.同时经测量得到了较理想的肖特基势垒二极管伏安特性曲线.
Better contact between TiSi_2 & Si can be for-med.The thin films of TiSi_2 were deposited byPECVD at low temperature.The height of Scho-ttky Barrier have 0.65eV and 0.58eV withJ-V and C-V measurements respectively.J-Vcharacteristic curves of Schottky Barrier diodshave been obtained with good qua(?)lity.
出处
《微电子学与计算机》
CSCD
北大核心
1990年第8期41-42,共2页
Microelectronics & Computer
