808nm波长锁定大功率半导体激光器列阵

808 nm Wavelength Locked High Power Semiconductor Laser Array

大功率半导体激光器列阵（DLA）具有功率高、电光转换效率高、可靠性强、寿命长、体积小及成本低等诸多优点,但其波长随温度变化较大,光谱线宽较宽,这些缺点直接限制了其实际应用。为了解决此问题,采用体布拉格光栅（VBG）构成波长锁定大功率半导体激光器系统。体布拉格光栅可以把波长锁定,同时把光谱线宽压窄,从而有效改善了DLA波长漂移和光谱线宽的情况。在载体水冷温度为30~60℃时,大功率半导体激光器列阵自由运行,波长温度漂移系数为0.26nm/℃,光谱线宽为2~3nm。当采用体布拉格光栅作为外腔反馈后,DLA的光谱线宽被压缩到了1.2nm,波长稳定在体布拉格光栅波长807.1nm附近,波长温度漂移系数小于0.005nm/℃。

High-power diode laser array（DLA）has many advantages,such as high power,high electro-optical conversion efficiency,high reliability,long life,small size and low cost.But the wavelength of the high-power DLA changes with the temperature obviously and the spectral width is wider.These disadvantages directly limit practical application.In order to solve the problems,the wavelength locked high power semiconductor laser system was constructed by volume Bragg grating（VBG）.The wavelength of the high-power DLA is locked and the spectral width is narrower by the VBG to improve the wavelength shift and spectral width.When the coolant temperature is 30-60 ℃,the high-power DLA runs freely,the wavelength temperature drift coefficient is 0.26 nm /℃ and the spectral width is 2-3 nm.After the VBG reflector is used as the external cavity feedback,the spectral width of the DLA is reduced to 1.2 nm,the wavelength is stabilized at the Bragg wavelength of 807.1 nm nearly,and the wavelength temperature shift coefficient is less than 0.005 nm/℃.