摘要
本文叙述了3μm 宽的钼栅图形的反应离子刻蚀(RIE)工艺并将其用于CMOS IC 的制备中.
The etching of the Mo-film are reportedin this paper.The 3μm width of gate is et-ched successfully with RIE method.This te-chnique has been used to manufacture of CMOSIC with Mo-gate.
出处
《微电子学与计算机》
CSCD
北大核心
1990年第10期6-8,共3页
Microelectronics & Computer
