甩胶喷雾热分解法制备ITO薄膜及光电性能研究

Preparation of ITO Thin Films by Spin Spray Pyrolysis and its Physical Properties

按In：Sn（物质的量比）=9：1,InCl3·4H2O和SnCl4·5H2O为前驱物,采用自制甩胶喷雾热分解制备薄膜装置在普通玻璃衬底上沉积了ITO薄膜,结果表明,采用自制甩胶喷雾热分解制备薄膜新装置成功制备出ITO薄膜。该装置结构简单、操作方便。制备ITO薄膜优化条件为：甩胶转速800r/min、衬底温度250℃、退火温度450℃、载气为空气、流量为7L/min、液体雾化速度0.2ml/min、雾粒速度3.5m/s。薄膜的沉积时间为5min,薄膜厚度约1000nm,最低电阻率为0.75＊10-4Ω·cm,薄膜在可见光范围（波长在400-700nm）内平均透光率为87.2%。衬底温度在200℃以上时呈现立方相结构。

Indium tin oxide （ITO） films were deposited on glass substrates using the homemade spin spray pyrolysis system. InCl3 · 4H2O and SnCl4 · 5H2O were used to prepare the precursor solution according to In： Sn （molar ratio） = 9：1. The results showed that the ITO thin films can be prepared by the new homemade spin spray pyrolysis device successfully. The device is simple in structure and easy to use. Optimal conditions for preparing the ITO thin films were that the spin speed was 800r/min, the substrate temperature was 250 ℃, the annealing temperature was 450 ℃, the carrier gas flow of the air was 7L/min, the atomizing rate of the solution was 0.2ml/min, and fog particle velocity was 3.5m / s. The thickness of the ITO thin film which prepared with the deposition time of 5min was about 1000nm, and its minimum resistivity and average light transmission rate in the visible range （wavelength 400-700nm） were 0.7510-4Ω·cm and 87.2%,respectively.When the substrate temperature was above 200℃, the film showed the cubic structure.