缓冲层对外延生长GaN薄膜性能的影响

Buffer layer effect on characateristic of GaN films

用分子束气相外延生长(MBE)法,通过改变缓冲层AlN的生长时间沉积GaN薄膜.用X射线衍射仪(XRD)、扫描电镜(SEM)、原子力显微镜(AFM)和拉曼光谱仪(Raman Spectroscropy),测试GaN薄膜的应力、平整度、粗糙度、晶体质量.研究了不同生长时间的缓冲层对GaN薄膜性能的影响,结果发现:生长30 min的缓冲层的样品B中的应力小于生长20 min缓冲层的样品A,并且样品B在晶体质量、平整度、粗糙度方面均优于样品A.

In order to study the characterization of GaN films with different thickness buffer layer by means of the Mol-ecular Beam Epitaxy（MBE）.The characterization of GaN films was studied by X-ray Diffraction（XRD）,Scanning Electron Microscopy（SEM）,Atomic Force Microscopy（AFM） and Raman Spectroscopy.The results show that the stress of sample B（AlN buffer layer growth of 30 min） was less than sample A（AlN buffer layer growth of 20 min）,and the crystal quality,flatness,roughness of sample B were better than sample A.