摘要
采用溶胶－凝胶方法在Pt／Ti／SiO2／Si衬底上制备了光滑均匀的PZT（50／50）铁电薄膜。用XRD、FT－IR反射光谱、Raman光谱以及原子力显微镜（AFM）研究了薄膜随热处理温度的结构变化过程以及薄膜中有机物的挥发。Raman光谱给出了薄膜中三方和四方相共存及转变的结构变化信息。AFM揭示了PZT薄膜中钙铁矿相的形成是从焦绿石结构中转变而来的，其生长机制可用Rosettes生长模型来解释。薄膜中相交约120°交角的3条延伸的界面线则是为了释放薄膜中的应力而产生的。
The PZT ferroelectric thin films were fabricated on Pt/Ti/SiO2/Si substrates using the spin coating of metallo - organic solu-tions. The structural development, spectroscopic of these films with increasirlg annealing temperature have been investigated using XRD,FT - IR anti - reflection spectra, Raman scattering spectra and atomic force microscopy (AFM). Raman spectra can give useful informa-tion for two - phase coexitence (trigonal and tetragonal phase) transformation in the films. AFM results show that the PZT perovskite structure in films may grow radially by rosettes. The tri - intersection configuration, three about 120°perovskites stretch out, will reduce or elimite the stress in the films.
出处
《功能材料》
EI
CAS
CSCD
北大核心
1999年第5期526-528,共3页
Journal of Functional Materials
关键词
溶胶-凝胶
铁电薄膜
热处理温度
结构转变
sol-gel
ferroelectric thin film
annealing temperature
structural development
