SiN_xO_y薄膜的制备和紫外光、蓝光发射

Blue Light Emission and Ultraviolet Light Emission From Silicon Oxynitride film Prepared by PECVD

研究了用等离子体增强化学气相沉积方法（PECV），经过后处理制备出SINxOy薄膜，测量了其光致发光（PL谱）特性，观测到强度大约为多孔硅蓝光发射10倍的蓝光（440nm）和紫外光（360nm）的发射。此外，测量了其X射线衍射谱，对其成分和结构做了一定的分析和研究。

Silicon oxynitride films are prepared by plasma enchanced chemical vapor deposition (PECVD) mothod. The reactant is de-posited on the crystal silicon wafers and quartz. Annealing at temperature 600℃, 700℃, 800℃, 900℃ for half an hour, oxidation at temper-ature 600℃, 700℃, 800℃, 900℃, 1000℃ for twenty minutes, strong blue light (440nm) and ultraviolet light (360nm) emission from silicon oxynitride film at room temperature have been observed. The PL mechanism is analyzed and discussed.