非对称结构相变存储单元的三维模拟与分析

Three Dimensional Simulation and Analysis of Phase Change Random Access Memory Cell with an Asymmetric Structure

文章提出一种具有非对称结构的新型相变存储器单元结构,并通过有限元方法对该非对称结构相变存储单元进行了三维电热模拟。模拟结果表明,在相同的特征尺寸下,非对称结构相变存储单元的操作电流明显小于传统的对称型T型结构相变存储单元。

This paper proposes a novel asymmetric structure of PCRAM cell,and then conducts three dimensional electric-thermal simulations based on FEA（Finite Element Analysis） method.The simulation results show that,with the same feature size,the operation current of the PCRAM cell with asymmetric structure is lower than that of the cell with conventional symmetric T-type structure.