脉冲激光淀积法在Pt/TiO_2/SiO_2/Si(001)衬底上制备Pb(Ta_(0.05)Zr_(0.45)Ti_(0.50))O_3薄膜的铁电性质研究

The Properties of Pb(Ta_(0.05)Zr_(0.45)Ti_(0.50))O_3 Films Deposited on Pt/TiO_2/SiO_2/Si(001) Substrates by Pulsed Laser Deposition

用脉冲激光淀积方法在Ｐｔ／ＴｉＯ２／ ＳｉＯ２／ Ｓｉ（００１） 衬底上制备了掺Ｔａ 的ＰＺＴ 薄膜。此薄膜显示了理想的铁电性。漏电流特性表明这种异质结构中Ｓｃｈｏｔｔｋｙ 场发射机制起主要作用。扫描电镜形貌照片表明ＰＺＴ 薄膜结晶很好并且异质结构界面无明显扩散。

The Ta-doped PZT (PTZT) films were fabricated on Pt/TiO 2/SiO 2/Si(001) substrates by pulsed laser deposition.The PTZT ferroelectric capacitors show good fatigue and retention properties.The leakage current is dominated by Schottky field emission mechanism.The SEM morphology photographs show that the PTZT films are well crystalized and that almost no obvious interdiffusion occurs across the interfaces.