摘要
用脉冲激光淀积方法在Pt/TiO2/ SiO2/ Si(001) 衬底上制备了掺Ta 的PZT 薄膜。此薄膜显示了理想的铁电性。漏电流特性表明这种异质结构中Schottky 场发射机制起主要作用。扫描电镜形貌照片表明PZT 薄膜结晶很好并且异质结构界面无明显扩散。
The Ta-doped PZT (PTZT) films were fabricated on Pt/TiO 2/SiO 2/Si(001) substrates by pulsed laser deposition.The PTZT ferroelectric capacitors show good fatigue and retention properties.The leakage current is dominated by Schottky field emission mechanism.The SEM morphology photographs show that the PTZT films are well crystalized and that almost no obvious interdiffusion occurs across the interfaces.
出处
《功能材料》
EI
CAS
CSCD
北大核心
1999年第6期639-640,共2页
Journal of Functional Materials
关键词
PTZT
薄膜
脉冲激光淀积
铁电性
漏电流
PTZT thin film
pulsed laser deposition
ferroelectricity
leakage current